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| www..com Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C GI3055 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26m 15A The GI3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Description Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VGS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : Tj, Tstg Ratings 30 20 15 9 50 28 0.22 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 4.8 110 Unit : /W : /W GI3055 Page: 1/5 ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 30 1.0 - Typ. 0.037 4 4.6 1.1 3 4.9 22.5 12.2 3.3 160 107 32 Max. 3.0 100 1 25 26 40 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=6A VGS= 20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=8A VGS=4.5V, ID=6A ID=8A VDS=24V VGS=5V VDS=15V ID=8A VGS=10V RG=3.4 RD=1.9 VGS=0V VDS=25V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD IS ISM 1 Min. - Typ. - Max. 1.3 15 50 Unit V A A Test Conditions IS=15A, VGS=0V, Tj=25 : VD= VG=0V, VS=1.3V Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GI3055 Page: 2/5 ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C Characteristics Curve Fig 1. Typical Output Characteristics 45 Fig 2. Typical Output Characteristics 40 35 30 25 20 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature GI3055 Fig 6. Type Power Dissipation Page: 3/5 ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode GI3055 Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI3055 Page: 5/5 |
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